BaInN3

ceramic

· BaInN3

BaInN3 is a barium indium nitride ceramic compound, a member of the ternary nitride material family being investigated for advanced semiconductor and optoelectronic applications. This is primarily a research-phase material rather than an established commercial product; compounds in this family are of interest for their potential wide bandgap properties and thermal stability, positioning them as candidates for high-temperature electronics, UV photonics, and power conversion devices where traditional semiconductors reach their limits.

wide bandgap semiconductorshigh-temperature electronicsUV optoelectronicspower semiconductor researchthermal barrier coatings (exploratory)next-generation nitride devices

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	3.789	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.680	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BaInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental