BaIn₂Te₄ is a ternary ceramic compound belonging to the chalcogenide family, combining barium, indium, and tellurium elements. This material is primarily of research interest for optoelectronic and semiconductor applications, particularly in infrared detection and photonic devices where its telluride composition offers tunable band gap properties. While not yet widely deployed in mainstream engineering, materials in this chemical family are investigated for mid-infrared (IR) sensing, nonlinear optical applications, and potential thermoelectric devices due to the semiconducting behavior of indium tellurides modified by barium incorporation.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23.98 | GPa | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 14.27 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.405 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9040 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 18.86 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.06448 | C/m² | — | ||
Seebeck Coefficient(S) | -97.87 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7845 | eV/atom | — |