BaIn₂S₄ is a ternary semiconductor compound combining barium, indium, and sulfur, belonging to the family of chalcogenide semiconductors with potential wide bandgap or intermediate bandgap characteristics. While primarily a research material rather than a widely commercialized engineering compound, it is investigated for optoelectronic and photovoltaic applications where its unique electronic structure might enable improved light absorption or carrier transport compared to conventional binary semiconductors. The material represents an emerging class of multi-element semiconductors being explored for next-generation solar cells, photodetectors, and other quantum-engineered electronic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.126 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.060 | eV | — | ||
| ↳ | 2.064 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.187 | eV/atom | — |