BaHgSe₂ is a ternary semiconductor compound composed of barium, mercury, and selenium, belonging to the class of chalcogenide semiconductors with potential for infrared optoelectronic applications. This material is primarily investigated in research settings for mid- to long-wavelength infrared detection and nonlinear optical devices, where its wide bandgap and optical transparency in the infrared spectrum offer advantages over conventional alternatives like HgCdTe in specific wavelength ranges. The mercury-containing formulation and synthesis complexity limit its current industrial deployment, making it most relevant to specialized research environments exploring next-generation infrared sensor technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.945 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.560 | eV | — | ||
| ↳ | 0.7950 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -141.4 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1479 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.9633 | eV/atom | — |