BaHfO2N is an experimental oxynitride ceramic combining barium, hafnium, oxygen, and nitrogen in a perovskite-related structure. This material family is being researched for high-temperature applications and potential photocatalytic or electronic properties that exploit the nitrogen incorporation to modify bandgap and chemical reactivity compared to traditional oxides. While not yet established in mainstream engineering applications, hafnium oxynitrides are of interest in aerospace and semiconductor sectors where thermal stability and novel electronic behavior are valued.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.9998 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1400 | eV/atom | — |