BaGe4(IrSe3)2

semiconductor

· BaGe4(IrSe3)2

BaGe4(IrSe3)2 is an experimental ternary semiconductor compound combining barium, germanium, iridium, and selenium into a layered crystal structure. This material belongs to a family of complex chalcogenides being investigated for potential applications in thermoelectric energy conversion and advanced optoelectronic devices, where the combination of heavy elements and layered geometry may enable tunable band structures and anisotropic transport properties.

thermoelectric energy conversion (research)optoelectronic semiconductors (development stage)solid-state physics characterizationband structure engineering (experimental)materials research and prototypingquantum material studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.330	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BaGe4(IrSe3)2

Electrical Properties

Regulatory Screening

Environmental

Export Control