BaGaSiH is an experimental ceramic compound containing barium, gallium, silicon, and hydrogen elements, representing a research-phase material in the broader family of mixed metal silicates and hydrides. While not yet established in mainstream industrial production, this composition lies at the intersection of semiconductor and ceramic materials science, with potential applications in high-temperature structural components, electronic substrates, or specialized refractory uses where the unique barium-gallium-silicon chemistry may offer thermal stability or electronic properties distinct from conventional ceramics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.639 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6200 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 24.93 | - | — | ||
| ↳ | 20.94 range 18.48–23.41median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.5209 | C/m² | — | ||
Seebeck Coefficient(S) | -229.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00380 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4668 | eV/atom | — |