BaGaSb2

ceramic

· JVASP-69146· BaGaSb2

BaGaSb₂ is a ternary ceramic compound belonging to the family of III-V semiconductors with a barium cation, combining gallium and antimony anions in a specific stoichiometric ratio. This material exists primarily in research and development contexts rather than established high-volume manufacturing, where it is investigated for potential optoelectronic and semiconductor device applications that exploit its bandgap and crystal structure characteristics. Engineers would consider this compound for advanced photonic or electronic applications where the specific combination of elements offers advantages over binary GaSb or other III-V alternatives, though material maturity and cost-effectiveness versus established compounds like GaAs or InSb remain critical evaluation factors.

experimental semiconductorsoptoelectronic researchIII-V compound devicesphotonic materials developmenthigh-frequency electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	5.909	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.1802	eV/atom	—
Formation Energy(ΔHf)	-0.4349	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BaGaSb2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental