BaGa2GeS6 is a quaternary semiconductor compound belonging to the chalcogenide family, combining barium, gallium, germanium, and sulfur into a crystalline material. This is a specialized research compound primarily investigated for infrared optics and nonlinear optical applications, where its wide transparency window in the mid-to-far infrared region makes it attractive for photonic devices. While not yet commercialized at scale, materials in this class are candidates for next-generation infrared imaging systems, spectroscopy, and laser frequency conversion where conventional semiconductors (GaAs, ZnSe) have limited transmission.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 37.89 | GPa | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 21.41 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.819 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 3.260 | eV | — | ||
| ↳ | 3.230 | eV | — | ||
| ↳ | 2.577 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.027 | eV/atom | — |