BaAsN₂ is an inorganic ceramic compound combining barium, arsenic, and nitrogen—a ternary nitride with potential semiconductor or refractory properties. This is a research-phase material studied in materials science for its crystal structure and physical characteristics; it is not widely commercialized in mainstream engineering applications. Interest in this material family stems from exploration of high-performance ceramics and wide-bandgap semiconductors, though limited industrial adoption reflects the challenges of synthesis, toxicity concerns associated with arsenic, and competition from more established ceramic and nitride systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 61.08 | GPa | — | ||
Shear Modulus(G) | 16.61 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.600 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.7291 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.1636 | eV/atom | — |