Ba8Si4 is a semiconducting silicide compound belonging to the rare-earth and alkaline-earth metal silicide family, characterized by a complex crystal structure typical of Zintl phases. This material is primarily investigated in research contexts for thermoelectric applications and advanced semiconductor devices, where its unique electronic band structure offers potential advantages over conventional semiconductors in specific temperature ranges and operating conditions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25.68 | GPa | — | ||
Shear Modulus(G) | 12.81 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01470 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3990 | eV/atom | — |