Ba6 Bi2 N2

semiconductor

· Ba6 Bi2 N2

Ba6Bi2N2 is an experimental nitride semiconductor compound combining barium and bismuth, representing a ternary ceramic material in the nitride family. This material is primarily of research interest for solid-state electronics and photonic device development, where it is being investigated for its semiconducting properties and potential bandgap characteristics that may offer advantages in niche optoelectronic or high-temperature applications compared to more conventional nitride semiconductors like GaN or AlN.

Research semiconductorsNitride ceramicsOptoelectronic devices (experimental)High-temperature electronicsMaterials discoverySolid-state physics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6488	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.9330	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba6 Bi2 N2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control