Ba₄GeSe is a quaternary ceramic compound composed of barium, germanium, and selenium, belonging to the family of chalcogenide ceramics with potential semiconducting or photonic properties. This is a research-phase material rather than an established commercial ceramic; compounds in this family are investigated for optoelectronic applications, particularly in infrared photonics and solid-state device development where the combined elements offer tunable band gaps and optical transparency in specific wavelength ranges. Engineers would consider Ba₄GeSe-type materials when conventional semiconductors or transparent ceramics reach performance limits in specialized IR or nonlinear optical systems, though material availability and scalability remain limiting factors compared to mature alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.110 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.073 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.05178 | eV/atom | — |