Ba4Ga5Si18

semiconductor

· Ba4Ga5Si18

Ba4Ga5Si18 is a barium gallium silicate compound belonging to the family of wide-bandgap semiconductors, specifically a mixed-metal oxide semiconductor with potential for optoelectronic and high-temperature applications. This material remains primarily in the research and development phase, investigated for its unique electronic structure and thermal stability in applications requiring semiconducting behavior at elevated temperatures or in radiation-rich environments. The barium-gallium-silicon system represents an underexplored composition space that may offer advantages over conventional GaAs or GaN semiconductors for niche applications where conventional alternatives prove limited.

high-temperature semiconductorswide-bandgap optoelectronicsexperimental research phaseradiation-resistant electronicsadvanced ceramics developmentemerging compound semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3100	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba4Ga5Si18

Electrical Properties

Regulatory Screening

Environmental

Export Control