Ba₄Sn₄S₈ is a quaternary sulfide semiconductor compound combining barium, tin, and sulfur elements. This material belongs to the thiostannate family and is primarily of research interest for exploring novel semiconducting phases with potential applications in optoelectronics and solid-state devices. While not yet widely commercialized, compounds in this chemical family are investigated for their tunable band gaps, ionic conductivity, and potential use in photovoltaic or photocatalytic systems where sulfide-based semiconductors offer alternatives to oxide or halide perovskites.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 32.11 | GPa | — | ||
Shear Modulus(G) | 16.83 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.762 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.444 | eV/atom | — |