Ba₄Si₈ is a barium silicide compound belonging to the rare-earth-free semiconductor family, synthesized primarily through solid-state reactions. This material is primarily of research interest rather than established commercial use, being investigated for its electronic and thermal properties within the broader class of metal silicides that show promise in thermoelectric applications and high-temperature device research.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00870 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3890 | eV/atom | — |