Ba4 Mn4 S8

semiconductor

· Ba4 Mn4 S8

Ba₄Mn₄S₈ is a quaternary chalcogenide semiconductor compound combining barium, manganese, and sulfur in a layered crystal structure. This is a research-phase material being investigated for potential optoelectronic and thermoelectric applications, particularly valued for its tunable bandgap and magnetic properties arising from the manganese sublattice. The material represents a promising candidate in the broader chalcogenide semiconductor family for next-generation energy conversion and photonic devices, though industrial deployment remains limited to specialized laboratories and academic research settings.

thermoelectric energy conversionphotovoltaic absorbersmagnetooptoelectronic devicessolid-state researchquantum material studieslow-dimensional semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	38.96	GPa	—
Shear Modulus(G)	19.65	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00520	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.429	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba4 Mn4 S8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control