Ba4 In2 Br2 O6

semiconductor

· Ba4 In2 Br2 O6

Ba₄In₂Br₂O₆ is an inorganic semiconductor compound combining barium, indium, bromine, and oxygen—a mixed-halide oxide in the perovskite-related family. This is a research-phase material being investigated for optoelectronic and photovoltaic applications, where the combination of heavy metal cations and halide/oxide ligands can tune bandgap and carrier dynamics for light absorption or emission.

Photovoltaic absorber layers (perovskite alternatives)Optoelectronic device researchX-ray detection/scintillationSemiconducting thin filmsHalide perovskite engineeringLead-free semiconductor exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.043	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.396	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba4 In2 Br2 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control