Ba₄Ge₂Se₈ is a quaternary chalcogenide semiconductor compound combining barium, germanium, and selenium in a layered crystal structure. This material is primarily of research interest rather than established commercial use, belonging to the family of heavy-metal chalcogenides that show potential for nonlinear optical, thermoelectric, and infrared photonic applications. The barium-germanium-selenide system is investigated for wide bandgap semiconductor behavior and phase-matching capabilities in frequency conversion and sensing devices where traditional materials like gallium arsenide or zinc selenide reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.260 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.420 | eV/atom | — |