Ba₄Bi₄O₁₀ is a complex oxide semiconductor compound belonging to the bismuth-barium oxide family, synthesized primarily for research and materials discovery applications. This material is investigated in academic and industrial R&D contexts for potential uses in photocatalysis, ferroelectrics, and optoelectronic devices, where its layered perovskite-related structure and electronic properties may offer advantages in light absorption or charge transport. While not yet widely deployed in production engineering, materials in this compositional space are of interest to researchers exploring alternatives to traditional semiconductors for specialized environmental remediation or energy conversion applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 51.93 | GPa | — | ||
Shear Modulus(G) | 28.02 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.993 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.094 | eV/atom | — |