Ba₄Ag₈Te₈ is a quaternary semiconductor compound combining barium, silver, and tellurium in a layered crystal structure, belonging to the family of mixed-metal chalcogenides. This is a research-stage material studied primarily for thermoelectric and optoelectronic applications, where the combination of elements offers potential for tunable band gaps and low lattice thermal conductivity. While not yet widely commercialized, compounds in this family are of interest to materials scientists exploring alternatives to traditional semiconductors for energy harvesting and solid-state device applications where low thermal conductivity is advantageous.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1445 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7980 | eV/atom | — |