Ba3Ta5O14N is an oxynitride ceramic semiconductor containing barium, tantalum, oxygen, and nitrogen. This compound belongs to the family of advanced functional ceramics being explored for photocatalytic and electronic applications, where the incorporation of nitrogen modifies the bandgap and electronic properties compared to purely oxide counterparts. Research into materials like this targets photocatalytic water splitting, environmental remediation, and potential optoelectronic devices where enhanced light absorption and charge transport are desired.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.800 | eV | — |