Ba3Ta5NO14 is an experimental oxide semiconductor compound containing barium, tantalum, nitrogen, and oxygen, belonging to the family of complex metal oxynitrides. This material is primarily of research interest for photocatalytic and electronic applications, where the mixed-anion composition (oxide-nitride) may offer tunable band gaps and enhanced light absorption compared to conventional oxide ceramics. While not yet widely adopted in mainstream industrial production, materials in this family are being investigated for photoelectrochemical water splitting, pollutant remediation, and next-generation semiconductor device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.800 | eV | — |