Ba3Gd2P4S16

semiconductor

· Ba3Gd2P4S16

Ba3Gd2P4S16 is a barium gadolinium phosphide sulfide semiconductor compound combining rare-earth and chalcogenide chemistry. This is an experimental research material studied for potential optoelectronic and photonic applications, particularly in infrared light emission and detection where the mixed anion (phosphide-sulfide) system may offer tunable bandgap and thermal stability advantages over single-anion semiconductors.

infrared optoelectronicsresearch semiconductorsrare-earth photonicschalcogenide devicesscintillation detector developmentthermal photovoltaics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.410	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba3Gd2P4S16

Electrical Properties

Regulatory Screening

Environmental

Export Control