Ba3Bi0.5B1.5S6 is a quaternary semiconductor compound combining barium, bismuth, boron, and sulfur in a mixed-valence structure. This is a research-phase material being investigated for its potential optical and electronic properties within the sulfide semiconductor family, which shows promise for infrared optics and photovoltaic applications where alternatives like traditional sulfides or phosphides may have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.430 | eV | — |