Ba3B1.5S6Sb0.5 is an experimental mixed-anion semiconductor compound combining barium, boron, sulfur, and antimony—a member of the rare-earth-free chalcogenide family being investigated for optoelectronic and photovoltaic applications. This research-phase material is of interest in solid-state physics and materials discovery programs seeking non-toxic, earth-abundant alternatives to conventional semiconductors; its ternary/quaternary structure allows tuning of band gap and carrier properties for specialized optical devices or thermoelectric conversion.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.010 | eV | — |