Ba₃SbN is an experimental ternary nitride semiconductor composed of barium, antimony, and nitrogen. This compound belongs to the family of metal nitride semiconductors, which are being investigated for optoelectronic and photovoltaic applications due to their tunable bandgaps and potential for high carrier mobility. While not yet commercialized, materials in this class show promise for next-generation solar cells, light-emitting devices, and high-temperature electronics where traditional semiconductors reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18.53 | GPa | — | ||
Shear Modulus(G) | 11.72 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1566 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9140 | eV/atom | — |