Ba₃P₂S₈ is an inorganic semiconductor compound combining barium, phosphorus, and sulfur, belonging to the family of mixed-anion chalcogenide materials. This is primarily a research-phase compound studied for its semiconducting properties in the context of photovoltaic and optoelectronic device development. The material's appeal lies in its potential for earth-abundant, non-toxic solar absorbers and light-emission applications, positioning it as an experimental alternative to more conventional semiconductor compounds, though industrial deployment remains limited pending optimization of synthesis routes and device performance.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 38.79 | GPa | — | ||
Shear Modulus(G) | 21.45 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.933 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.378 | eV/atom | — |