Ba3 In2 Br2 O5

semiconductor

· Ba3 In2 Br2 O5

Ba₃In₂Br₂O₅ is a mixed halide–oxide semiconductor compound combining barium, indium, bromine, and oxygen in a layered perovskite-related structure. This is a research-phase material being investigated for next-generation optoelectronic and photovoltaic applications, where the combination of inorganic halides with oxide frameworks offers potential for tunable bandgaps and improved stability compared to all-halide perovskites. Engineers evaluating this material should recognize it as an emerging alternative in the broader family of lead-free and tin-free halide semiconductors, where the oxide component may enhance moisture resistance and thermal stability while maintaining semiconducting functionality.

perovskite solar cellslead-free photovoltaicsoptoelectronic devicesscintillation detectorsthin-film semiconductorsradiation detection

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.437	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.302	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba3 In2 Br2 O5

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control