Ba3Bi2 is an intermetallic compound semiconductor belonging to the bismuth-barium family, investigated primarily in research contexts for its electronic and structural properties. This material is not widely commercialized in mainstream engineering applications but represents part of a broader family of bismuth-based compounds being explored for potential use in thermoelectric devices, optoelectronics, and advanced semiconductor applications where bismuth's unique electronic structure offers advantages. Engineers considering this material should recognize it as an experimental compound relevant to materials research and early-stage device development rather than a proven production-grade material.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20.40 | GPa | — | ||
Shear Modulus(G) | 14.22 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1191 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5400 | eV/atom | — |