Ba2NdGaSe5

semiconductor

· Ba2NdGaSe5

Ba2NdGaSe5 is a quaternary chalcogenide semiconductor compound combining barium, neodymium, gallium, and selenium in a layered crystal structure. This is a research-phase material being investigated for infrared (IR) optoelectronic and nonlinear optical applications, where rare-earth doping and selenium-based semiconductors offer tunable bandgaps and enhanced light-matter interactions compared to conventional III-V semiconductors. The material belongs to the broader family of lanthanide chalcogenides, which are of interest for mid-to-far infrared detection, frequency conversion, and quantum optics where transparency beyond typical semiconductor ranges is needed.

infrared detectorsnonlinear opticsmid-IR photonicsfrequency conversionresearch-stage optoelectronicsquantum optics platforms

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.180	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2NdGaSe5

Electrical Properties

Regulatory Screening

Environmental

Export Control