Ba2InYSe5 is a quaternary selenide semiconductor compound combining barium, indium, yttrium, and selenium in a mixed-cation crystal structure. This is a research-phase material under investigation for infrared optics and nonlinear optical applications, belonging to the broader family of chalcogenide semiconductors that offer wide transparency windows in the mid-to-far infrared spectrum. The multi-cation design enables tuning of bandgap and optical properties compared to simpler binary or ternary selenides, making it of interest for specialized photonic and detection applications where conventional semiconductors like silicon or germanium are unsuitable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.310 | eV | — |