Ba2InGdTe5 is a quaternary chalcogenide semiconductor compound containing barium, indium, gadolinium, and tellurium elements. This is a research-stage material explored for its potential in thermoelectric and optoelectronic applications, belonging to the broader family of complex metal tellurides that show promise for solid-state energy conversion and infrared detection where conventional semiconductors have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.360 | eV | — |