Ba2InDyTe5 is a quaternary chalcogenide semiconductor compound combining barium, indium, dysprosium, and tellurium. This material belongs to the rare-earth-doped telluride family and is primarily of research interest for optoelectronic and thermoelectric applications, where the incorporation of dysprosium offers potential for tuning electronic and thermal properties beyond binary or ternary telluride systems. While not yet widely deployed in commercial products, compounds in this family are investigated for mid-infrared detection, solid-state lighting, and thermoelectric energy conversion where rare-earth dopants can enhance performance through bandgap engineering and phonon scattering control.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.350 | eV | — |