Ba2InAgS4

semiconductor

· Ba2InAgS4

Ba2InAgS4 is a quaternary semiconductor compound combining barium, indium, silver, and sulfur—a representative member of the ternary sulfide semiconductor family. This is a research-phase material being investigated for optoelectronic and photovoltaic applications where its band gap and crystal structure could enable efficient light absorption or emission; it belongs to the broader class of metal sulfide semiconductors that offer alternatives to more common II-VI or III-V semiconductors, particularly for specialized spectral windows or high-radiation environments.

research photovoltaicsinfrared optoelectronicsexperimental solar cellscompound semiconductor developmentradiation-hard detector materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.320	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2InAgS4

Electrical Properties

Regulatory Screening

Environmental

Export Control