Ba2GdGaTe5 is a complex ternary/quaternary chalcogenide semiconductor compound combining barium, gadolinium, gallium, and tellurium. This material belongs to the family of wide-bandgap and mid-infrared semiconductors; it is primarily investigated in research contexts for optoelectronic and photonic device applications rather than established commercial production. Engineers and researchers consider chalcogenide semiconductors like this for specialized infrared detection, nonlinear optical frequency conversion, and potential thermoelectric applications where conventional semiconductors (Si, GaAs) are optically transparent or otherwise unsuitable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.120 | eV | — |