Ba₂GaYTe₅ is a quaternary semiconductor compound combining barium, gallium, yttrium, and tellurium in a layered crystal structure. This is a research-phase material investigated for its potential in infrared optics and nonlinear optical applications, particularly in the mid-infrared spectral region where telluride semiconductors excel. It represents an emerging class of wide-bandgap semiconductors that may offer improved transparency and optical properties compared to simpler binary or ternary telluride alternatives, though industrial adoption remains limited and material availability is restricted to specialized research laboratories.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.080 | eV | — |