Ba2GaGdSe5 is a complex selenide semiconductor compound combining barium, gallium, and gadolinium in a ternary/quaternary chalcogenide structure. This is a research-phase material primarily of interest for infrared photonics and nonlinear optical applications, where the wide bandgap and heavy-metal selenide composition enable mid-to-far-infrared transparency and potential second-harmonic generation or other frequency-conversion functions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.870 | eV | — |