Ba2GaErSe5 is a quaternary semiconductor compound combining barium, gallium, erbium, and selenium—a rare-earth-doped chalcogenide material primarily of research interest. This material family is investigated for infrared optics, photonic devices, and solid-state laser applications where rare-earth ions like Er³⁺ provide luminescence and nonlinear optical properties in the mid-to-infrared spectrum. While not yet established in mainstream production, quaternary selenide semiconductors like this represent an emerging class for wavelength-selective emitters and potential quantum optics platforms where conventional II-VI or III-V semiconductors fall short.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.950 | eV | — |