Ba2GaAsSe5 is a quaternary semiconductor compound combining barium, gallium, arsenic, and selenium elements, belonging to the family of chalcogenide semiconductors with potential mid-infrared optical properties. This is a research-phase material primarily investigated for infrared photonics and nonlinear optical applications where wide bandgap semiconductors offer transparency and frequency conversion capabilities. The compound is notable within chalcogenide research for combining multiple anion types (As and Se), which may enable tuning of optical and electronic properties compared to binary or ternary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.390 | eV | — |