Ba2ErInTe5 is a ternary chalcogenide semiconductor compound containing barium, erbium, indium, and tellurium. This is a research-phase material studied for its potential in infrared photonics and solid-state device applications, belonging to the broader family of rare-earth telluride semiconductors that offer tunable bandgaps and thermal properties for specialized optoelectronic functions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.350 | eV | — |