Ba2DyGaSe5 is a quaternary chalcogenide semiconductor compound combining barium, dysprosium, gallium, and selenium—a research-phase material explored for its potential optoelectronic and photonic properties. This material belongs to the family of rare-earth-containing selenides, which are investigated for infrared transmission, nonlinear optical effects, and wide-bandgap semiconductor applications where conventional materials fall short. While not yet widely deployed in production, compounds in this class are of interest to researchers developing next-generation infrared optics, deep-UV detectors, and specialty photonic devices where rare-earth doping provides tunable electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.607 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.350 | eV | — | ||
| ↳ | 1.658 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.748 | eV/atom | — |