Ba2AgInS4
semiconductor· Ba2AgInS4
Ba2AgInS4 is a quaternary sulfide semiconductor compound combining barium, silver, indium, and sulfur in a layered crystal structure. This material is primarily of research interest for optoelectronic and photovoltaic applications, particularly in the infrared spectrum and nonlinear optical devices, where its wide bandgap and anisotropic properties offer potential advantages over conventional semiconductors. The compound belongs to the family of multinary sulfides being explored as alternatives to toxic or scarce materials in next-generation solar cells, light-emitting devices, and wavelength conversion applications.
infrared optoelectronicsphotovoltaic researchnonlinear optical devicesradiation detectionwide-bandgap semiconductorsmaterials screening for green electronics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.