Ba2AgInS4 is a quaternary sulfide semiconductor compound combining barium, silver, indium, and sulfur in a layered crystal structure. This material is primarily of research interest for optoelectronic and photovoltaic applications, particularly in the infrared spectrum and nonlinear optical devices, where its wide bandgap and anisotropic properties offer potential advantages over conventional semiconductors. The compound belongs to the family of multinary sulfides being explored as alternatives to toxic or scarce materials in next-generation solar cells, light-emitting devices, and wavelength conversion applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.320 | eV | — |