Ba₂Zn₂Sn₂ is an intermetallic semiconductor compound combining barium, zinc, and tin in a stoichiometric ratio. This material represents an emerging class of multinary semiconductors being investigated in materials research for next-generation optoelectronic and thermoelectric applications, where the combination of elements is designed to engineer band structure and transport properties. Engineers would consider this compound for exploratory projects in photovoltaics, light-emitting devices, or thermoelectric energy conversion where unconventional elemental combinations may offer advantages in efficiency, cost, or thermal stability compared to traditional binary or ternary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 37.68 | GPa | — | ||
Shear Modulus(G) | 26.31 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01480 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6010 | eV/atom | — |