Ba₂V₂S₆ is an inorganic semiconductor compound composed of barium, vanadium, and sulfur, belonging to the class of mixed-metal chalcogenides. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its layered crystal structure and bandgap characteristics position it as a candidate for next-generation thin-film solar cells and light-emitting devices, though it remains largely in the development phase compared to mature semiconductor alternatives like silicon or cadmium telluride.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000200 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.541 | eV/atom | — |