Ba2 Tl4 O8

semiconductor

· Ba2 Tl4 O8

Ba₂Tl₄O₈ is a mixed-valence oxide semiconductor containing barium and thallium, representing a compound from the family of complex metal oxides with potential electronic applications. This material remains primarily in the research and development phase, with interest driven by its unique crystal structure and electronic properties that may enable novel device functionality in areas requiring specialized semiconducting behavior. The thallium-containing oxide system is notable for exploring unconventional electronic states and phase behavior that differ significantly from conventional semiconductors.

experimental semiconductor researchelectronic materials developmentmixed-valence oxide studiesthin-film device prototypingcondensed matter physics investigationemerging electronic applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.09180	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.413	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2 Tl4 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control