Ba₂Ti₂S₆ is a ternary chalcogenide semiconductor composed of barium, titanium, and sulfur, belonging to the family of metal sulfide compounds with layered or complex crystal structures. This material is primarily of research and developmental interest for photovoltaic and optoelectronic applications, where its bandgap and electronic properties position it as a candidate for solar cells, photodetectors, or light-emitting devices; it represents an alternative to oxide-based semiconductors and may offer advantages in absorber layer design or wide-bandgap device engineering, though industrial adoption remains limited and most work is conducted at the laboratory scale.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04550 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.833 | eV/atom | — |