Ba2 Ta2 S6
semiconductorBa₂Ta₂S₆ is a layered metal sulfide semiconductor compound belonging to the class of transition metal chalcogenides, characterized by barium and tantalum cations with sulfide anions. This is a research-stage material currently explored in the scientific literature for its potential as a semiconductor in optoelectronic and photocatalytic applications, leveraging the wide bandgap and layered crystal structure typical of metal sulfide semiconductors. The material represents a less-explored member of the metal sulfide family with potential advantages for photocatalysis, photodetection, or energy conversion where the specific combination of barium and tantalum chemistry may offer unique band alignment or charge carrier properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |