Ba2 Si6 Sn2 O18

semiconductor

· Ba2 Si6 Sn2 O18

Ba₂Si₆Sn₂O₁₈ is a mixed-metal oxide semiconductor combining barium, silicon, and tin in a crystalline structure, belonging to the silicate family of functional ceramics. This compound is primarily of research and developmental interest for optoelectronic and photocatalytic applications, where the tin and silicon components can influence band gap engineering and charge carrier dynamics. The material represents an exploratory composition within the broader family of complex oxide semiconductors being investigated for next-generation energy conversion and environmental remediation technologies.

photocatalytic materials (experimental)optoelectronic device researchenvironmental remediation (water/air treatment)functional ceramic developmentband gap engineering studiessolid-state chemistry research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.929	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.780	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2 Si6 Sn2 O18

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control