Ba2 O6 Ta1 Bi1

semiconductor

· Ba2 O6 Ta1 Bi1

Ba₂O₆Ta₁Bi₁ is a mixed-metal oxide semiconductor compound containing barium, tantalum, and bismuth—a research-phase material belonging to the family of complex perovskite-related oxides. This compound is primarily of academic and exploratory interest rather than established industrial production, with potential applications in photocatalysis, optoelectronics, or ferroelectric/multiferroic device research, where the combination of heavy bismuth and high-valence tantalum may enable novel band structure engineering or photon absorption characteristics.

photocatalytic materials (research)semiconductor optoelectronics (experimental)ferroelectric oxides (exploratory)visible-light absorption devicessolid-state chemistry researchnext-generation oxide electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.576	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.772	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2 O6 Ta1 Bi1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control